Cubane-like Alkyl Zinc Alkoxides as excellent precursors for the preparation of nanosized ZnO-based Field-effect transistors (FETs) with high mobility at low temperature

AKSU Y., Driess M.

3rd EuCheMS (European Association for Chemical and Molecular Sciences)-Chemistry Congress, Nürnberg, Germany, 20 August - 02 September 2010, pp.34

  • Publication Type: Conference Paper / Full Text
  • City: Nürnberg
  • Country: Germany
  • Page Numbers: pp.34
  • Akdeniz University Affiliated: Yes

Abstract

Nanostructured metal oxides provide an exceptionally rich variety of building blocks for future technologies such as LCDs, FETs and LEDs.[1] However, the target preparation and the complex interplay of structure and morphology is still a considerable challenge for material chemists. The key-step for the synthesis of reliable and well defined materials is the control of defects and morphology of the particles at the nanoscale and relatively low temperatures.
ZnO-based optoelectrical devices are Conventionally fabricated on the basis of crystalline oxide channels that are typically produced at relatively high temperatures.[2] Since it is very difficult to achieve low-cost materials by traditional mixing and heating procedures we are currently developing novel types of alkyl-zinc-alkoxides which are suitable for a facile preparation of nanosized ZnO-based FETs with high electron mobilities at low temperatures.
Here we present the preparation of thin films based on ZnO as an active semiconducting layer in FETs using alkyl-zinc-alkoxide precursors.[3] The easy compatibility of our low temperature-processing strategy with organic substrates leads to ZnO-TFTs with promising high channel mobility and high transparency for printable electronics.
[1] J. J. Schneider, R. C. Hoffman, J. Engstler, O. Soffke, W. Jaegermann, A. Issanin,
A. Klyszcz Advanced Materials 2008, 20, 3383.
[2] H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler Applied Physics
Letters 2005, 86, 13503.
[3] Y. Aksu, S. Schutte, M. Driess International Patent 2009 WO 102008058040.6-44.