Nanosized-ZnO-Based flexible FETs with High Mobility Prepared from Organometallic Single Source Precursors

AKSU Y., Driess M.

GDCh (German Chemical Society)-Science Forum Chemistry, Frankfurt Am Main, Germany, 30 August - 02 September 2010, pp.343

  • Publication Type: Conference Paper / Full Text
  • City: Frankfurt Am Main
  • Country: Germany
  • Page Numbers: pp.343
  • Akdeniz University Affiliated: Yes

Abstract

The fabrication and characterization of transparent thin-film transistors represents a major and emerging field of transparent flexible electronics that has attracted considerable interest in the last years. These transistors have been fabricated on the basis of crystalline oxide channels that are typically produced at relatively high temperatures. [1] In particular, the greatest challenge in this field is currently to gain a complete understanding of the interplay between synthesis, processing and semiconductor performance for the future progress of printable electronic devices that are based on inorganic semiconductors such as ZnO. [2]
We report our investigations on the formation, characterization, low temperature processing of a molecular precursor as well as its simple conversion to uniform ZnO thin films and promising electronic performance for use in FET devices. We successfully prepared solution-processed zinc oxide thin films as an active channel layer in thin-film transistors (TFTs) via a spin-coating method using Zinkalkoxide-based single source precursors. The combination of this simple- and low temperature-processing technology with its easy compatibility with organic substrates, transparency, and high channel mobility makes the fabricated ZnO-TFT a very promising low cost optoelectronic device for the future generation of printable electronics. [3]
[1] H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, D. A. Keszler Applied Physics Letters 2005, 86, 13503
[2] J. J. Schneider, R. C. Hoffman, J. Engstler, O. Soffke, W. Jaegermann, A. Issanin, A. Klyszcz Advanced Materials 2008, 20, 3383
[3] Y. Aksu, S. Schutte, M. Driess International Patent Application 2008 (submitted)