Inhibition of negative differential resistance in modulation-doped n-type GaxIn1-xNyAs1-y/GaAs quantum wells

Sun Y., Vaughan M. P., Agarwal A., Yilmaz M., Ulug B., Ulug A., ...Daha Fazla

PHYSICAL REVIEW B, cilt.75, sa.20, 2007 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 75 Sayı: 20
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1103/physrevb.75.205316
  • Dergi Adı: PHYSICAL REVIEW B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Akdeniz Üniversitesi Adresli: Evet

Özet

We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped GaxIn1-xNyAs1-y/GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1x10(7) cm/s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.