AlSb and InAs-GaSb layer thickness effect on HH-LH splitting and band gap energies in InAs/AlSb/GaSb type-II superlattices
OPTO-ELECTRONICS REVIEW, vol.23, no.1, pp.24-27, 2015 (SCI-Expanded)
- Publication Type: Article / Article
- Volume: 23 Issue: 1
- Publication Date: 2015
- Doi Number: 10.1515/oere-2015-0001
- Journal Name: OPTO-ELECTRONICS REVIEW
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.24-27
- Keywords: InAs/AlSb/GaSb type-II SL structure, HH-LH splitting, N-structure, DFT, layer thickness effect, ELECTRON-GAS
- Akdeniz University Affiliated: Yes
Abstract
This study is based on the investigation of AlSb layer thickness effect on heavy-hole light-hole (HH-LH) splitting and band gap energies in a recently developed N-structure based on InAs/AlSb/GaSb type II superlattice (T2SL) p-i-n photodetector. eFirst principle calculations were carried out tailoring the band gap and HH-LH splitting energies for two possible interface transition alloys of InSb and AlAs between InAs and AlSb interfaces in the superlattice. Results show that AlSb and InAs-GaSb layer thicknesses enable to control HH-LH splitting energies to desired values for Auger recombination process where AlSb/GaSb total layer thickness is equal to InAs layers for the structures with InSb and AlAs interfaces.