Tunable long-wavelength broad band asymmetric quantum well infrared photodetector

Hostut M., Kartal D., Ergun Y., Sokmen I.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.22, sa.4, ss.422-426, 2007 (SCI-Expanded)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 22 Sayı: 4
  • Basım Tarihi: 2007
  • Doi Numarası: 10.1088/0268-1242/22/4/023
  • Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.422-426
  • Akdeniz Üniversitesi Adresli: Hayır

Özet

We present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 mu m, 9.5 mu m and 10.8 mu m respectively. The device operation is based on an intersubband bound to quasi-bound transition. Asymmetry in the barriers is shown to give rise to the dependence of the spectral line width on applied reverse bias.

We present a theoretical investigation of a GaAs/AlGaAs infrared detector consisting of three asymmetric quantum wells. Each well is designed to yield absorption and a photoresponse at peak wavelengths of 8.2 mu m, 9.5 mu m and 10.8 mu m respectively. The device operation is based on an intersubband bound to quasi-bound transition. Asymmetry in the barriers is shown to give rise to the dependence of the spectral line width on applied reverse bias.