Research Information System
GDCh (German Chemical Society)-Science Forum Chemistry, Frankfurt Am Main, Germany, 30 August - 02 September 2010, pp.341
ITO, tin-doped Indium oxide (Sn:In2O3) is a wide band gap transparent semiconductor material that has a direct band gap of 3.6 eV which makes it a great candidate to be employed in new microelectronic fields. ITO is a key coating material that is widely used as thin and transparent semiconductor film in LCDs, PDPs and LEDs. Traditionally, ITO powders are synthesized by reacting a tin compound with an indium compound under different reaction conditions and subsequent heat or pressure treatments.[1,2] However this conventional methods produce ITO particles which consist of micron-sized agglomerates and additional mechanical milling is required in order to produce nanocrystalline substances.
A way to overcome these problems is a single source precursor approach which allows an effective preparation of nano-sized-Indium-Tin-Oxide with high Sn-content and stability, that was devised, developed and successfully implemented into our group.[3] We report in this article on the synthesis, characterization, thermal decomposition and optoelectronic properties of the corresponding final oxide products.
[1] J. van Boort, R. Groth, Philips. Tech. Rev. 1968, 29 (1), 17
[2] I. Kikuchi, K. Ozawa, Electr. Ceram. 1985, 5, 23
[3] Y. Aksu, M. Driess, T. Lüthge, R. Fügemann, M. Inhester, German Patent 2007 2007P0100, and International Patent Application 2007 WO-102007013181.1