From Organometallic Single Source Precursors to High Mobility Flexible Thin-Film Field-Effect Transistors with nanosized-ZnO as Active Channel
EUROMAT 2009 European Congress and Exhibition on Advanced Materials and Processes, Glasgow, United Kingdom, 7 - 10 September 2009, pp.21
- Publication Type: Conference Paper / Full Text
- City: Glasgow
- Country: United Kingdom
- Page Numbers: pp.21
- Akdeniz University Affiliated: Yes
Abstract
The recent development of transparent thin-film transistors represents a major advance in the emerging field
of transparent electronics. These transistors have been fabricated on the basis of crystalline oxide channels
that are typically produced at relatively high temperatures. [1] Currently, the greatest challenge in this field is
to gain a complete understanding of the interplay between synthesis, processing and semiconductor
performance for the future progress of printable electronic devices that are based on inorganic semiconductors
such as ZnO. [2] We successfully prepared solution-processed zinc oxide thin films as an active channel layer in
thin-film transistors (TFTs) via a spin-coating method using Zinkalkoxide-based single source precursors. The
combination of this simple- and low temperature-processing technology with its easy compatibility with
organic substrates, transparency, and high channel mobility makes the fabricated ZnO-TFT a very promising
low cost optoelectronic device for the future generation of printable electronics. [3] [1] H. Q. Chiang, J. F.
Wager, R. L. Hoffman, J. Jeong, D. A. Keszler Applied Physics Letters 2005, 86, 13503[2] J. J. Schneider, R.
C. Hoffman, J. Engstler, O. Soffke, W. Jaegermann, A. Issanin, A. Klyszcz Advanced Materials 2008, 20, 3383
[3] Y. Aksu, S. Schutte, M. Driess International Patent Application 2008 (submitted)