Deep impurity levels in Ge1-xSix alloys

Azhdarov G., Kyazimzade R., Hostut M.

SOLID STATE COMMUNICATIONS, cilt.111, sa.12, ss.675-679, 1999 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 111 Sayı: 12
  • Basım Tarihi: 1999
  • Doi Numarası: 10.1016/s0038-1098(99)00272-0
  • Dergi Adı: SOLID STATE COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.675-679
  • Anahtar Kelimeler: semiconductors, impurities in semiconductors, electronic states (localized)
  • Akdeniz Üniversitesi Adresli: Hayır

Özet

The ground-state binding energies of deep impurities (Cu, Ag, Au, Zn, Cd, Hg, Ni, Fe, S, Se, Te) in Ge1-xSix (0 less than or equal to x less than or equal to 0.35) have been experimentally determined on the basis of Hall measurements.

The ground-state binding energies of deep impurities (Cu, Ag, Au, Zn, Cd, Hg, Ni, Fe, S, Se, Te) in Ge1-xSix (0 less than or equal to x less than or equal to 0.35) have been experimentally determined on the basis of Hall measurements.

It is shown that the average activation energies (Delta E) of different charge states of the impurities in Ge1-xSix increase approximately linearly with silicon concentration in agreement with the concept of virtual crystal model for alloys. Random-alloy splitting of the deep impurity levels due to different local surroundings of the defect core in the crystals is discussed.

Obtained results allow binding energies and possible charge states of the investigated deep impurities in all Ge1-xSix system to be determined.