Deep impurity levels in Ge1-xSix alloys
SOLID STATE COMMUNICATIONS, vol.111, no.12, pp.675-679, 1999 (SCI-Expanded, Scopus)
- Publication Type: Article / Article
- Volume: 111 Issue: 12
- Publication Date: 1999
- Doi Number: 10.1016/s0038-1098(99)00272-0
- Journal Name: SOLID STATE COMMUNICATIONS
- Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Page Numbers: pp.675-679
- Keywords: semiconductors, impurities in semiconductors, electronic states (localized)
- Akdeniz University Affiliated: No
Abstract
The ground-state binding energies of deep impurities (Cu, Ag, Au, Zn, Cd, Hg, Ni, Fe, S, Se, Te) in Ge1-xSix (0 less than or equal to x less than or equal to 0.35) have been experimentally determined on the basis of Hall measurements.
It is shown that the average activation energies (Delta E) of different charge states of the impurities in Ge1-xSix increase approximately linearly with silicon concentration in agreement with the concept of virtual crystal model for alloys. Random-alloy splitting of the deep impurity levels due to different local surroundings of the defect core in the crystals is discussed.
Obtained results allow binding energies and possible charge states of the investigated deep impurities in all Ge1-xSix system to be determined.