Temperature dependent PL properties of ASF structures prepared by vapour etching technique

Kabacelik I., Yilmaz M., ULUĞ B.

6th International Conference of the Balkan-Physical-Union, İstanbul, Turkey, 22 - 26 August 2006, vol.899, pp.610, (Full Text) identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733351
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.610
  • Keywords: ammonium silicon fluoride, vapour etching, luminescence, POROUS SILICON
  • Akdeniz University Affiliated: Yes

Abstract

Temperature dependent photoluminescence (PL) measurements of (NH4)(2)SiF6 (ASF) structures prepared by the well known vapour etching technique are carried out for temperatures ranging from 10K to 300K. It is observed that PL peak position shifts to higher energies and the intensity is reduced as the temperature decreases.