Preparation and characterization of In2S3 semiconductor thin films using the sol-gel method

Zarbaliyev M. Z., Mutlu İ. H., Aslan F.

Journal of Sol-Gel Science and Technology, cilt.59, sa.1, ss.153-157, 2011 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 59 Sayı: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1007/s10971-011-2473-0
  • Dergi Adı: Journal of Sol-Gel Science and Technology
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.153-157
  • Anahtar Kelimeler: A2 III B3 VI compounds, Buffer layer materials, Sol-Gel, Solar cells, Thin films
  • Akdeniz Üniversitesi Adresli: Hayır

Özet

This study describes the In2S3 semiconductor thin film coating on glass substrate by sol-gel method. The In2S 3 thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV-visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In2S3 semiconductor thin films prepared by sol-gel method is formed at T~360-520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In2S 3 thin films reveal that Eg~2.51 eV for the In2S 3 thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In2S3 layer is about 400 nm. © 2011 Springer Science+Business Media, LLC.