New highly linear tunable transconductor circuits with low number of MOS transistors

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Yücel F., Yüce E.

INTERNATIONAL JOURNAL OF ELECTRONICS, cilt.103, sa.8, ss.1301-1317, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 103 Sayı: 8
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1080/00207217.2015.1092603
  • Dergi Adı: INTERNATIONAL JOURNAL OF ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1301-1317
  • Anahtar Kelimeler: MOSFET circuits, transconductor, inductor simulator, LOW-VOLTAGE, CMOS, FILTERS, AMPLIFIER, DESIGN, ELEMENTS, RANGE, VLSI
  • Akdeniz Üniversitesi Adresli: Evet

Özet

In this article, two new highly linear tunable transconductor circuits are proposed. The transconductors employ only six MOS transistors operated in saturation region. The second transconductor is derived from the first one with a slight modification. Transconductance of both transconductors can be tuned by a control voltage. Both of the transconductors do not need any additional bias voltages and currents. Another important feature of the transconductors is their high input and output impedances for cascadability with other circuits. Besides, total harmonic distortions are less than 1.5% for both transconductors. A positive lossless grounded inductor simulator with a grounded capacitor is given as an application example of the transconductors. Simulation and experimental test results are included to show effectiveness of the proposed circuits.