Preparation of Highly Conductive, Transparent and Stable Indium-Tin-Oxide Thin Films Using an Organometallic Single-Source Precursor
EUROMAT 2009 European Congress and Exhibition on Advanced Materials and Processes, Glasgow, United Kingdom, 7 - 10 September 2009, pp.22, (Full Text)
- Publication Type: Conference Paper / Full Text
- City: Glasgow
- Country: United Kingdom
- Page Numbers: pp.22
- Akdeniz University Affiliated: Yes
Abstract
Due to its low sheet resistance and excellent optical properties ITO is a key coating material that is widely
used as thin and transparent semiconductor film in LCDs, PDPs and LEDs. ITO powders have been synthesized
by various methods and are synthesized generally in reacting a tin compound with an indium compound under
different reaction conditions and subsequent application of heat or pressure.[1,2] ITO powders that are
produced via this route consist of micron-sized agglomerates and additional mechanical milling is required in
order to produce nanodispersions. Whereas all these traditional methods utilized two precursors for the
preparation of ITO, no way had been found to synthesize ITO powders from a single source precursor. In
order to overcome these problems a single source precursor approach which allows an effective preparation of
nano-sized-Indium-Tin-Oxide with high Sn-content and stability was devised, developed and successfully
implemented into our group.[3] In this article we report on the syntheses, characterization, thermal
decomposition and properties of the corresponding final products of these precursors. [1] J. van Boort, R.
Groth, Philips. Tech. Rev. 1968, 29 (1), 17 [2] I. Kikuchi, K. Ozawa, Electr. Ceram. 1985, 5, 23
[3] Y. Aksu, M. Driess, T. Lüthge, R. Fügemann, M. Inhester, German
Patent 2007 2007P0100, and International Patent Application 2007 WO-102007013181.1