From Molecular Gallium and Indium Siloxide Precursors to Amorphous Semiconducting Transparent Oxide Layers for Applications in Thin-Film Field-Effect Transistors

Samedov K., AKSU Y., Driess M.

CHEMPLUSCHEM, cilt.77, sa.8, ss.663-674, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 77 Sayı: 8
  • Basım Tarihi: 2012
  • Doi Numarası: 10.1002/cplu.201200086
  • Dergi Adı: CHEMPLUSCHEM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.663-674
  • Anahtar Kelimeler: field-effect transistors, metal alkoxides, optoelectronic materials, organic electronics, thin films, CHEMICAL-VAPOR-DEPOSITION, SINGLE-SOURCE PRECURSORS, OPTICAL-PROPERTIES, CONDUCTING OXIDES, BETA-GA2O3 NANOWIRES, SILICA MATERIALS, HIGH-TEMPERATURE, IN2O3 FILMS, ALKOXIDE COMPLEXES, CRYSTAL-STRUCTURE
  • Akdeniz Üniversitesi Adresli: Evet

Özet

The syntheses, structural characterization, and thermal degradation of a series of the new indium and gallium siloxide dimers [{Me2In(OSiEt3)}2] (1), [{Me2Ga(OSiEt3)}2] (2), [{Me2In(OSi(OtBu)3)}2] (3), [{Me2Ga(OSi(OtBu)3)}2] (4), and In[OSi(OtBu)3)] (5) is reported. Compounds 14 are readily accessible by facile Bronsted reaction of InMe3 or GaMe3 with the corresponding silanols Et3SiOH and (tBuO)3SiOH, respectively. Compound 5 could be obtained by analogous protolysis of [In{N(SiMe3)2}3] with an excess amount of (tBuO)3SiOH. The suitability of 15 to serve as molecular precursors for low-temperature synthesis of amorphous indium and gallium oxide for electronic applications was probed. Thus their thermal degradation was studied by Thermogravimetric/differential thermogravimetry analysis (TGA/DTG). Compounds 14 were decomposed under dry synthetic air (20?% O2, 80?% N2) at low temperature to yield amorphous indium oxide and gallium oxide particles, respectively. In contrast, thermal degradation of 5 affords amorphous indium silicate. All of these products were analyzed by multiple techniques including powder X-ray diffraction analysis (PXRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX). Thin-film field-effect transistors (FETs) could be fabricated through spin-coating of silicon-wafers with solutions of 1 in toluene and subsequent calcination under dry synthetic air at 350 degrees C. These films exhibit very good FET performance with a field-effect mobility of 3.0 x 10-1 cm2?V-1?s and an on/off current ratio of 108.

The syntheses, structural characterization, and thermal degradation of a series of the new indium and gallium siloxide dimers [{Me2In(OSiEt3)}2] (1), [{Me2Ga(OSiEt3)}2] (2), [{Me2In(OSi(OtBu)3)}2] (3), [{Me2Ga(OSi(OtBu)3)}2] (4), and In[OSi(OtBu)3)] (5) is reported. Compounds 1–4 are readily accessible by facile Brönsted reaction of InMe3 or GaMe3 with the corresponding silanols Et3SiOH and (tBuO)3SiOH, respectively. Compound 5 could be obtained by analogous protolysis of [In{N(SiMe3)2}3] with an excess amount of (tBuO)3SiOH. The suitability of 1–5 to serve as molecular precursors for low-temperature synthesis of amorphous indium and gallium oxide for electronic applications was probed. Thus their thermal degradation was studied by Thermogravimetric/differential thermogravimetry analysis (TGA/DTG). Compounds 1–4 were decomposed under dry synthetic air (20 % O2, 80 % N2) at low temperature to yield amorphous indium oxide and gallium oxide particles, respectively. In contrast, thermal degradation of 5 affords amorphous indium silicate. All of these products were analyzed by multiple techniques including powder X-ray diffraction analysis (PXRD), transmission electron microscopy (TEM), and energy dispersive X-ray spectroscopy (EDX). Thin-film field-effect transistors (FETs) could be fabricated through spin-coating of silicon-wafers with solutions of 1 in toluene and subsequent calcination under dry synthetic air at 350 °C. These films exhibit very good FET performance with a field-effect mobility of 3.0×10−1 cm2 V−1 s and an on/off current ratio of 108.