Transparent Thin-Film Field-Effect Transistors with High-Performance Using Novel Homo- and Heteroleptic Indium(III)-Tin(II) Single-Source Precursors

---

Copy For Citation

AKSU Y., Samedov K., Driess M.

5th EuCheMS (European Association for Chemical and Molecular Sciences)-Chemistry Congress, İstanbul, Turkey, 31 August - 04 September 2014, pp.65, (Full Text)

• Publication Type: Conference Paper / Full Text
• City: İstanbul
• Country: Turkey
• Page Numbers: pp.65
• Akdeniz University Affiliated: Yes

Abstract

We present the successful straightforward preparation and structural characterization of the novel homo- and heteroleptic indium(III)−tin(II) complexes (^tBuO)Sn(μ-O^tBu)₂InX₂ (X = O^tBu (1), N(SiMe₃)₂ (2)) as well as the first heptanuclear bimetallic chlorides, that is, the  oxo  tert-butoxide  clusters  In₃Sn₄(O^tBu)₆Cl₆O₂   and In₃Sn₄(O^tBu)₆Cl₇O_{2 *} In₃Sn₄(O^tBu)₇Cl₆O₂ (4) by a one-pot reaction procedure. Thermal degradation of the complexes 1 and 2 under dry synthetic air give rise to semiconducting halogen-free tin-rich indium tin oxide (ITO) materials, which are highly promising for use in the preparation of thin film field effect transistors. Although the thermal degradation of 1 leads to highly crystalline material, the degradation of 2 affords tin-rich ITO materials with more amorphous character. Thus, thin films prepared from 2 were successfully probed for FET applications. The thin film FET devices produced by spin-coating a solution of 2 in toluene on n-doped Si-wafers and subsequent calcination in dry air at 350 °C, revealed high electron mobilities (3.7 × 10−¹cm²V⁻¹s) and I_on/off ratios (1 × 10⁷)due to the high homogeneity of the amorphous material and the lack of grain-boundaries.