Akademik Veri Yönetim Sistemi
European Physical Journal Plus, cilt.139, sa.10, 2024 (SCI-Expanded)
The present study investigates the effects of external fields, including magnetic, electric, and non-resonant high-frequency intense laser fields, on the binding energies of the heavy hole excitons and the (hh1-e1) interband transitions from the ground state energy level of the heavy hole to the ground state energy level of the electron in GaAs/AlxGa1-xAs Gaussian type single quantum well. The study also considers the roles of the well width and the structure parameter. The results obtained show that the geometrical shape of the structure and the applied external fields are very effective tools on the excitonic binding and excitonic absorption spectra. From the results obtained, it was observed that the bandgap of semiconductor materials can be tuned by changing the structural parameters along with the applied external fields according to the purpose. This tunability enables the development of devices with optimized performance and new functionalities, thus driving innovation in various fields of technology.