A Ni/n-Si Schottky barrier diode was produced by electrodeposition technique from the electrolyte containing nickel ions under galvanostatic control. The deposition was carried out in a three-electrode cell at room temperature. The electrical characteristics of the Schottky diodes have been investigated using current-voltage (l-V) and capacitance-voltage (C-V) measurements. Ni/n-Si/AuSb diode current-voltage characteristics display low reverse bias leakage currents. The barrier height and ideality factor (n) were obtained 0.60 eV and 3.28 respectively. The high ideality factor value was attributed to oxide layer at the metal semiconductor interface.