Akademik Veri Yönetim Sistemi
IEEE Nuclear Science Symposium (NSS)/Medical Imaging Conference (MIC)/17th International Workshop on Room-Temperature Semiconductor X-ray and Gamma-ray Detectors, Tennessee, Amerika Birleşik Devletleri, 30 Ekim - 06 Kasım 2010, ss.3773-3775
In this work, we report on the polarization effect in thallium bromide (TlBr) detectors at different operating temperatures(TlBr is a promising room-temperature semiconductor detector material due to its high atomic number (Tl: 81, Br: 35), high density (7(56 g/cm3) and wide band gap (2(68 eV)(Current TlBr detectors suffer from polarization, which causes performance degradation over time when high voltage is applied(A 4(6 mm thick TlBr detector with a pixellated Au/Cr anode fabricated by Radiation Monitoring Devices, Inc(is used in the experiments(The detector has a planar cathode and nine anode pixels with 1(0 mm pitch surrounded by a guard ring(The same detector successfully operated under bias at -20 degrees C for over a month [1](Several experiments at -15, -10, -5, 0, 5, 10, and 15 degrees C were carried out where the detector was under bias for four weeks at -1000 V(Measured energy resolution from a typical pixel at -5 degrees C is 1(6% at 662 keV without any depth correction( Other spectroscopic properties such as photopeak amplitude and efficiency were studied over time.