Lead-free ferroelectric BaTIO3 (BTO) thin films produced by the green process

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Mutlu İ. H., Uluğ B., Tumbul A., Çölkesen P.

KUWAIT JOURNAL OF SCIENCE, vol.50, pp.1-6, 2023 (SCI-Expanded)

  • Publication Type: Article / Article
  • Volume: 50
  • Publication Date: 2023
  • Doi Number: 10.1016/j.kjs.2023.06.001
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED)
  • Page Numbers: pp.1-6
  • Akdeniz University Affiliated: Yes


In this study, we present structural and dielectric properties of doped and un-doped BaTiO3 (BTO) thin films
samples. BTO sample were produced by non-vacuum process specifically sol-gel spin coating technique. The
doped samples involve Co, Gd, Mn, Sr, and Zr in the Ba-site of the BTO. We used SEM, XRD and AFM analysis
techniques to characterized our samples. We also conduct a dielectric measurement using a Vector Network
Analyzer. According to our findings the highest dielectric constants were observed for Sr and Zr doped BaTiO3
thin films which were not applied any heat treatment and were obtained as 9.25 and 9.4 at 5.4 GHz frequency,
respectively. On the other hand, the value of dielectric constants of the films that were analyzed after heat
treatment were determined as 7.7 and 7.45 at 6.8 GHz on Sr and Zr doped BaTiO3 thin films, respectively.