Sol-gel derived In2S3 buffer layers for inverted organic photovoltaic cells


Aslan F., Adam G., Stadler P., Goktas A., Mutlu İ. H., Sariciftci N. S.

Solar Energy, vol.108, pp.230-237, 2014 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 108
  • Publication Date: 2014
  • Doi Number: 10.1016/j.solener.2014.07.011
  • Journal Name: Solar Energy
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.230-237
  • Keywords: Indium sulfide, Organic solar cells, P3HT:PCBM, Sol-gel method
  • Akdeniz University Affiliated: No

Abstract

In2S3 - a wide-gap semiconductor - has been implemented in organic photovoltaics using an all-solution based sol-gel route. Typically, indium sulfide is deployed as a buffer layer in copper-indium sulfide (CIS) photovoltaic systems as electron-selective contact on the bottom electrode. We transferred this idea to organic, solution-processed photovoltaics, exploring its potential in an inverted hybrid device structure. The optical and morphological properties of the films were investigated by UV-Vis transmittance spectroscopy and scanning electron microscopy. The optical studies showed that the In2S3 films exhibit a band gap of ~2.25eV. The effect of In2S3 film thickness on conversion efficiency of the device was also investigated. The device with the 158±5nm of In2S3 film thickness provides the best performance with an average short-circuit current density (Jsc) of approximately 7.96±0.12mA/cm2, open-circuit voltage (Voc) of 0.609±0.007 V, fill factor (FF) of 0.49±0.014, and power conversion efficiency of 3.04±0.14%. © 2014 Elsevier Ltd.