Preparation and characterization of In2S3 semiconductor thin films using the sol-gel method


Zarbaliyev M. Z., Mutlu İ. H., Aslan F.

Journal of Sol-Gel Science and Technology, vol.59, no.1, pp.153-157, 2011 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 59 Issue: 1
  • Publication Date: 2011
  • Doi Number: 10.1007/s10971-011-2473-0
  • Journal Name: Journal of Sol-Gel Science and Technology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.153-157
  • Keywords: A2 III B3 VI compounds, Buffer layer materials, Sol-Gel, Solar cells, Thin films
  • Akdeniz University Affiliated: No

Abstract

This study describes the In2S3 semiconductor thin film coating on glass substrate by sol-gel method. The In2S 3 thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV-visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In2S3 semiconductor thin films prepared by sol-gel method is formed at T~360-520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In2S 3 thin films reveal that Eg~2.51 eV for the In2S 3 thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In2S3 layer is about 400 nm. © 2011 Springer Science+Business Media, LLC.