Preparation of Ga2Se3 thin films by sol-gel technique


Mutlu İ. H., Zarbaliyev M. Z., Aslan F.

Journal of Sol-Gel Science and Technology, vol.50, no.3, pp.271-274, 2009 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 50 Issue: 3
  • Publication Date: 2009
  • Doi Number: 10.1007/s10971-009-1973-7
  • Journal Name: Journal of Sol-Gel Science and Technology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.271-274
  • Keywords: Defect semiconductors, Ga2Se3, Sol-gel method, Thin films
  • Akdeniz University Affiliated: No

Abstract

In this study we describe the preparation of Ga2Se3 semiconductor compound thin films by sol-gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV-visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga2Se3 crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga2Se3 thin films was estimated to be about E g ~ 2.56 eV. The thickness of the one-coat Ga2Se3 thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm. © 2009 Springer Science+Business Media, LLC.