Effects of Cu/In ratio and annealing temperature on physical properties of dip-coated CuInS2 thin films
Materials Science in Semiconductor Processing, cilt.16, sa.1, ss.138-142, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 16 Sayı: 1
- Basım Tarihi: 2013
- Doi Numarası: 10.1016/j.mssp.2012.05.015
- Dergi Adı: Materials Science in Semiconductor Processing
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.138-142
- Anahtar Kelimeler: CuInS2, Sol-gel method, Solar Cells, Thin films
- Akdeniz Üniversitesi Adresli: Hayır
Özet
CuInS2 thin films were prepared by sol-gel dip-coating method on glass substrates using 0.75, 1 and 1.25 ratios of Cu/In in the solution. The prepared films were annealed at 380 C, 420 C and 460 C for 30 min under argon environment. The structural, optical, morphological and composition properties of those were investigated by X-ray diffraction (XRD), UV-vis transmittance spectroscopy and scanning electron microscopy with an energy dispersive X-ray spectrometer. The XRD results showed that the films exhibit polycrystalline tetragonal CuInS2 phase with (112) orientation. According to the EDX results the Cu/In ratios of the films were respectively 0.65, 0.92 and 1.35 for the Cu/In ratios of 0.75, 1 and 1.25 in the solutions. The optical band gap was found to be between 1.30 eV and 1.43 eV, depending on Cu/In ratio. © 2012 Elsevier Ltd.