Effects of Cu/In ratio and annealing temperature on physical properties of dip-coated CuInS2 thin films


Aslan F., Zarbali M., YEŞİLATA B., Mutlu İ. H.

Materials Science in Semiconductor Processing, vol.16, no.1, pp.138-142, 2013 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 16 Issue: 1
  • Publication Date: 2013
  • Doi Number: 10.1016/j.mssp.2012.05.015
  • Journal Name: Materials Science in Semiconductor Processing
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.138-142
  • Keywords: CuInS2, Sol-gel method, Solar Cells, Thin films
  • Akdeniz University Affiliated: No

Abstract

CuInS2 thin films were prepared by sol-gel dip-coating method on glass substrates using 0.75, 1 and 1.25 ratios of Cu/In in the solution. The prepared films were annealed at 380 C, 420 C and 460 C for 30 min under argon environment. The structural, optical, morphological and composition properties of those were investigated by X-ray diffraction (XRD), UV-vis transmittance spectroscopy and scanning electron microscopy with an energy dispersive X-ray spectrometer. The XRD results showed that the films exhibit polycrystalline tetragonal CuInS2 phase with (112) orientation. According to the EDX results the Cu/In ratios of the films were respectively 0.65, 0.92 and 1.35 for the Cu/In ratios of 0.75, 1 and 1.25 in the solutions. The optical band gap was found to be between 1.30 eV and 1.43 eV, depending on Cu/In ratio. © 2012 Elsevier Ltd.